Gallium concentration dependence of room-temperature near-bandedge luminescence in n-type ZnO:Ga

We investigated the optical properties of epitaxial \textit{n}-type ZnO films grown on lattice-matched ScAlMgO$_4$ substrates. As the Ga doping concentration increased up to $6 \times 10^{20}$ cm$^{-3}$, the absorption edge showed a systematic blueshift, consistent with the Burstein-Moss effect. A bright near-bandedge photoluminescence (PL) could be observed even at room temperature, the intensity of which increased monotonically as the doping concentration was increased except for the highest doping level. It indicates that nonradiative transitions dominate at a low doping density. Both a Stokes shift and broadening in the PL band are monotonically increasing functions of donor concentration, which was explained in terms of potential fluctuations caused by the random distribution of donor impurities.Comment: accepted for publication for Applied Physics Letters 4 figure

Monte-Carlo simulation of localization dynamics of excitons in ZnO and CdZnO quantum well structures

Localization dynamics of excitons was studied for ZnO/MgZnO and CdZnO/MgZnO quantum wells (QW). The experimental photoluminescence (PL) and absorption data were compared with the results of Monte Carlo simulation in which the excitonic hopping was modeled. The temperature-dependent PL linewidth and Stokes shift were found to be in a qualitatively reasonable agreement with the hopping model, with accounting for an additional inhomogeneous broadening for the case of linewidth. The density of localized states used in the simulation for the CdZnO QW was consistent with the absorption spectrum taken at 5 K.Comment: 4 figures, to appear in J. Appl. Phy

Optical Properties of LiNbO2_2 thin films

The complex dielectric functions of LiNbO$_2$ were determined using optical transmittance and reflectance spectroscopies at room temperature. The measured dielectric function spectra reveal distinct structures at several bandgap energies. The bandgaps (exciton resonances) in the spectrum were observed at ca. 2.3, 3.2, 3.9, and 5.1 eV, respectively. These experimental data have been fit using a model dielectric function based on the electronic energy-band structure near critical points plus excitonic effects. The features of measured dielectric functions are, to some extent, reproduced quantitatively by an ab-initio calculation including the interaction effects between electrons and holes.Comment: 8 pages, 5 figures, 1 tabl

Analysis on reflection spectra in strained ZnO thin films

Thin films of laser molecular-beam epitaxy grown ZnO films were studied with respect to their optical properties. 4-K reflectivity was used to analyze various samples grown at different biaxial in-plane strain. The spectra show two structures at 3.37 eV corresponding to the A-free exciton transition and at 3.38 eV corresponding to the B-free exciton transition. Theoretical reflectivity spectra were calculated using the spatial dispersion model. Thus, the transverse energies, the longitudinal transversal splitting (ELT,), the oscillator strengths, and the damping parameters were determined for both the A- and B-free excitons of ZnO. As a rough trend, the strain dependence of the energy E_LT for the A-excitons is characterized by a negatively-peaking behavior with a minimum around the zero strain, while ELT for the B-excitons is an increasing function of the strain field values.Comment: 4 pages, 2 figures, 1 table, conference: ICMAT2005 (Singapore), to appear in an issue of J. Cryst. Growt

Polarization properties of laser-diode-pumped micro-grained Nd:YAG ceramic lasers

Detailed polarization properties have been examined in laser-diode-pumped (LD-pumped) micro-grained ceramic Nd:YAG lasers in different microchip cavity configurations. Stable linearly-polarized single-frequency oscillations, whose polarization direction coincide with that of an LD pump light, were observed in an external cavity scheme. While, in the case of a thin-slice laser scheme with coated reflective ends, elliptically-polarized single-frequency operations took place in the low pump-power regime and dynamic instabilities appeared, featuring self-induced antiphase modulations among counter-rotating circularly-polarized components having slightly different lasing frequencies, with increasing the pump power.Comment: 9 pages, 5 figure

Large capacitance enhancement and negative compressibility of two-dimensional electronic systems at LaAlO3_3/SrTiO3_3 interfaces

Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both superconducts and displays indications of hysteretic magnetoresistance. An essential step for device applications is establishing the ability to vary the electronic conductivity of the electron system by means of a gate. We have fabricated metallic top gates above a conductive interface to vary the electron density at the interface. By monitoring capacitance and electric field penetration, we are able to tune the charge carrier density and establish that we can completely deplete the metallic interface with small voltages. Moreover, at low carrier densities, the capacitance is significantly enhanced beyond the geometric capacitance for the structure. In the same low density region, the metallic interface overscreens an external electric field. We attribute these observations to a negative compressibility of the electronic system at the interface. Similar phenomena have been observed previously in semiconducting two-dimensional electronic systems. The observed compressibility result is consistent with the interface containing a system of mobile electrons in two dimensions.Comment: 4 figures in main text; 4 figures in the supplemen

The Effect of Pentoxifylline and Propentofylline(HWA-285) on Post-Ischemic Rat Brain

開始ページ、終了ページ: 冊子体のページ付

Photoemission study of TiO2/VO2 interfaces

We have measured photoemission spectra of two kinds of TiO$_2$-capped VO$_2$ thin films, namely, that with rutile-type TiO$_2$ (r-TiO$_2$/VO$_2$) and that with amorphous TiO$_2$ (a-TiO$_2$/VO$_2$) capping layers. Below the Metal-insulator transition temperature of the VO$_2$ thin films, $\sim 300$ K, metallic states were not observed for the interfaces with TiO$_2$, in contrast with the interfaces between the band insulator SrTiO$_3$ and the Mott insulator LaTiO$_3$ in spite of the fact that both TiO$_2$ and SrTiO$_3$ are band insulators with $d^0$ electronic configurations and both VO$_2$ and LaTiO$_3$ are Mott insulators with $d^1$ electronic configurations. We discuss possible origins of this difference and suggest the importance of the polarity discontinuity of the interfaces. Stronger incoherent part was observed in r-TiO$_2$/VO$_2$ than in a-TiO$_2$/VO$_2$, suggesting Ti-V atomic diffusion due to the higher deposition temperature for r-TiO$_2$/VO$_2$.Comment: 5 pages, 6 figure

Water release and homogenization by dynamic recrystallization of quartz

To evaluate changes in water distribution generated by dynamic recrystallization of quartz, we performed infrared (IR) spectroscopy mapping of quartz in deformed granite from the Wariyama uplift zone in NE Japan. We analyzed three granite samples with different degrees of deformation: almost undeformed, weakly deformed, and strongly deformed. Dynamically recrystallized quartz grains with a grain size of ∼10 µm are found in these three samples, but the percentages of recrystallized grains and the recrystallization processes are different. Quartz in the almost-undeformed sample shows wavy grain boundaries, with a few bulged quartz grains. In the weakly deformed sample, bulging of quartz, which consumed adjacent host quartz grains, forms regions of a few hundred micrometers. In the strongly deformed sample, almost all quartz grains are recrystallized by subgrain rotation. IR spectra of quartz in the three samples commonly show a broad water band owing to H2O fluid at 2800–3750 cm−1, with no structural OH bands. Water contents in host quartz grains in the almost-undeformed sample are in the range of 40–1750 wt ppm, with a mean of 500±280 wt ppm H2O. On the other hand, water contents in regions of recrystallized grains, regardless of the recrystallization processes involved, are in the range of 100–510 wt ppm, with a mean of 220±70 wt ppm; these values are low and homogeneous compared with the contents in host quartz grains. These low water contents in recrystallized regions also contrast with those of up to 1540 wt ppm in adjacent host grains in the weakly deformed sample. Water contents in regions of subgrains are intermediate between those in host and recrystallized grains. These results for water distribution in quartz imply that water was released by dynamic recrystallization.</p